Product Summary

The 2SK583 is a N-Channel Enhancement Silicon MOSFET for analog switches, low-pass filters.

Parametrics

2SK583 absolute maximum ratings: (1)Drain-to-Source Voltage, VDS: 50 V; (2)Gate-to-Source Voltage, VGS: ±12 V; (3)Drain Current, ID: 200 mA; (4)Drain Current(Pulse), IDP: 300 mA; (5)Allowable Power Dissipation, PD: 600 mW; (6)Channel Temperature, Tch: 125℃; (7)Storage Temperature, Tstg: –55 to +125℃.

Features

2SK583 features: (1)Large |yfs|; (2)Enhancement type; (3)Small ON-resistance.

Diagrams

2SK583 Package Dimensions

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