Product Summary

The BU508A is a high voltage fast-switching NPN power transistor. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

Parametrics

BU508A absolute maximum ratings: (1)Collector-Emitter Voltage (VBE = 0): 1500 V; (2)Collector-Emitter Voltage (IB = 0): 700 V; (3)Emitter-Base Voltage (IC = 0): 10 V; (4)Collector Current: 8 A; (5)Collector Peak Current (tp < 5 ms): 15 A; (6)Total Dissipation at Tc = 25 ℃: 125 W; (7)Visol, Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink: 2500 V; (8)Storage Temperature: -65 to 150 ℃; (9)Max. Operating Junction Temperature: 150 ℃.

Features

BU508A features: (1)STMicroelectronics preferred salestypes; (2)high voltage capability (> 1500 V); (3)fully insulated package (U.L. compliant) for easy mounting.

Diagrams

BU508A internal schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BU508A
BU508A

STMicroelectronics

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Data Sheet

Negotiable 
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BU508AF

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Data Sheet

0-1: $0.67
1-10: $0.61
10-100: $0.57
100-250: $0.56
BU508AFI
BU508AFI

STMicroelectronics

Transistors Bipolar (BJT) NPN General Purpose

Data Sheet

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BU508AFTBTU
BU508AFTBTU

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Data Sheet

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BU508AW
BU508AW

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Data Sheet

0-1: $1.69
1-10: $1.36
10-100: $1.24
100-250: $1.12
BU508AX
BU508AX

Other


Data Sheet

Negotiable